2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V - researchr publication authors

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Pulkit Jain, Umut Arslan, Meenakshi Sekhar, Blake C. Lin, Liqiong Wei, Tanaya Sahu, Juan Alzate-vinasco, Ajay Vangapaty, Mesut Meterelliyoz, Nathan Strutt, Albert B. Chen, Patrick Hentges, Pedro A. Quintero, Chris Connor, Oleg Golonzka, Kevin Fischer, Fatih Hamzaoglu. 2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V. In IEEE International Solid- State Circuits Conference, ISSCC 2019, San Francisco, CA, USA, February 17-21, 2019. pages 212-214, IEEE, 2019. [doi]

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