Liqiong Wei - researchr alias

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Viewing Publication 1 - 21 from 21

2019

2015

2 high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assistKyung-Hoae Koo, Liqiong Wei, John Keane, Uddalak Bhattacharya, Eric A. Karl, Kevin Zhang. vlsic 2015: 266 [doi]

2011

Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM DesignFatih Hamzaoglu, Yih Wang, Pramod Kolar, Liqiong Wei, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang. dt, 28(1):22-31, 2011. [doi]

2010

A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power ManagementYih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr. jssc, 45(1):103-110, 2010. [doi]

2009

A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power managementYih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr. isscc 2009: 456-457 [doi]

2008

2002

2001

On effective I::DDQ:: testing of low-voltage CMOS circuits using leakage control techniquesZhanping Chen, Liqiong Wei, Kaushik Roy. tvlsi, 9(5):718-725, 2001. [doi]

2000

1999

1998

Estimation of standby leakage power in CMOS circuits considering accurate modeling of transistor stacksZhanping Chen, Mark Johnson, Liqiong Wei, Kaushik Roy. islped 1998: 239-244 [doi]

Design and Optimization of Low Voltage High Performance Dual Threshold CMOS CircuitsLiqiong Wei, Zhanping Chen, Mark Johnson, Kaushik Roy, Vivek De. dac 1998: 489-494 [doi]

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