A new high-voltage tolerant I/O for improving ESD robustness

J. T. Jang, Y.-C. Kim, W. H. Bong, E. K. Kwon, B. J. Kwon, J. S. Jeon, H. G. Kim, I. H. Son. A new high-voltage tolerant I/O for improving ESD robustness. Microelectronics Reliability, 46(9-11):1634-1637, 2006. [doi]

@article{JangKBKKJKS06,
  title = {A new high-voltage tolerant I/O for improving ESD robustness},
  author = {J. T. Jang and Y.-C. Kim and W. H. Bong and E. K. Kwon and B. J. Kwon and J. S. Jeon and H. G. Kim and I. H. Son},
  year = {2006},
  doi = {10.1016/j.microrel.2006.07.033},
  url = {http://dx.doi.org/10.1016/j.microrel.2006.07.033},
  tags = {C++},
  researchr = {https://researchr.org/publication/JangKBKKJKS06},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {46},
  number = {9-11},
  pages = {1634-1637},
}