Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress - researchr publication authors

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S. A. Jauss, S. Schwaiger, W. Daves, S. Noll, O. Ambacher. Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 56-59, IEEE, 2015. [doi]

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