S. A. Jauss, S. Schwaiger, W. Daves, S. Noll, O. Ambacher. Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 56-59, IEEE, 2015. [doi]
@inproceedings{JaussSDNA15,
title = {Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress},
author = {S. A. Jauss and S. Schwaiger and W. Daves and S. Noll and O. Ambacher},
year = {2015},
doi = {10.1109/ESSDERC.2015.7324712},
url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324712},
researchr = {https://researchr.org/publication/JaussSDNA15},
cites = {0},
citedby = {0},
pages = {56-59},
booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7135-3},
}