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Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal. The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectronics Journal, 46(12):1387-1391, 2015. [doi]
Abstract is missing.