Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-Hoon Jang, Sang Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi. A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. J. Solid-State Circuits, 51(1):204-212, 2016. [doi]
@article{JeongIKNSCYKKPK16,
title = {A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate},
author = {Woopyo Jeong and Jae-Woo Im and Doo-Hyun Kim and Sangwan Nam and Dong-Kyo Shim and Myung-Hoon Choi and Hyun-Jun Yoon and Dae-Han Kim and Youse Kim and Hyun Wook Park and Dong-Hun Kwak and Sang-Won Park and Seok Min Yoon and Wook-Ghee Hahn and Jinho Ryu and Sang-Won Shim and Kyung-Tae Kang and Jeong-Don Ihm and In-Mo Kim and Doosub Lee and Ji-Ho Cho and Moosung Kim and Jae-Hoon Jang and Sang Won Hwang and Dae-Seok Byeon and Hyang-Ja Yang and Ki Tae Park and Kyehyun Kyung and Jeong-Hyuk Choi},
year = {2016},
doi = {10.1109/JSSC.2015.2474117},
url = {http://dx.doi.org/10.1109/JSSC.2015.2474117},
researchr = {https://researchr.org/publication/JeongIKNSCYKKPK16},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {51},
number = {1},
pages = {204-212},
}