Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor - researchr publication authors

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Moonyoung Jeong, Sangho Lee, Yootak Jun, Kiseok Lee, Seokhan Park, Jeonghoon Oh, Ilgweon Kim, Jemin Park. Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array Transistor. In IEEE International Reliability Physics Symposium, IRPS 2024, Grapevine, TX, USA, April 14-18, 2024. pages 23, IEEE, 2024. [doi]

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