A 32.9% PAE, 15.3 dBm, 21.6-41.6 GHz power amplifier in 65nm CMOS using coupled resonators

Haikun Jia, Clarissa C. Prawoto, Baoyong Chi, Zhihua Wang, C. Patrick Yue. A 32.9% PAE, 15.3 dBm, 21.6-41.6 GHz power amplifier in 65nm CMOS using coupled resonators. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016. pages 345-348, IEEE, 2016. [doi]

@inproceedings{JiaPCWY16,
  title = {A 32.9% PAE, 15.3 dBm, 21.6-41.6 GHz power amplifier in 65nm CMOS using coupled resonators},
  author = {Haikun Jia and Clarissa C. Prawoto and Baoyong Chi and Zhihua Wang and C. Patrick Yue},
  year = {2016},
  doi = {10.1109/ASSCC.2016.7844206},
  url = {http://dx.doi.org/10.1109/ASSCC.2016.7844206},
  researchr = {https://researchr.org/publication/JiaPCWY16},
  cites = {0},
  citedby = {0},
  pages = {345-348},
  booktitle = {IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-3700-1},
}