A 32.9% PAE, 15.3 dBm, 21.6-41.6 GHz power amplifier in 65nm CMOS using coupled resonators

Haikun Jia, Clarissa C. Prawoto, Baoyong Chi, Zhihua Wang, C. Patrick Yue. A 32.9% PAE, 15.3 dBm, 21.6-41.6 GHz power amplifier in 65nm CMOS using coupled resonators. In IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, November 7-9, 2016. pages 345-348, IEEE, 2016. [doi]

Abstract

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