2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Guangyuan Jiang, Peng Cui, Guangyuan Zhang, Yuping Zeng, Guang Yang, Chen Fu, Zhaojun Lin, Mingyan Wang, Heng Zhou. 2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors. Microelectronics Journal, 129:105602, 2022. [doi]

This author has not been identified. Look up 'Guangyuan Jiang' in GoogleThis author has not been identified. Look up 'Peng Cui' in GoogleThis author has not been identified. Look up 'Guangyuan Zhang' in GoogleThis author has not been identified. Look up 'Yuping Zeng' in GoogleThis author has not been identified. Look up 'Guang Yang' in GoogleThis author has not been identified. Look up 'Chen Fu' in GoogleThis author has not been identified. Look up 'Zhaojun Lin' in GoogleThis author has not been identified. Look up 'Mingyan Wang' in GoogleThis author has not been identified. Look up 'Heng Zhou' in Google

runs on WebDSL