Guangyuan Jiang, Peng Cui, Guangyuan Zhang, Yuping Zeng, Guang Yang, Chen Fu, Zhaojun Lin, Mingyan Wang, Heng Zhou. 2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors. Microelectronics Journal, 129:105602, 2022. [doi]
Abstract is missing.