Full-custom design of low leakage data preserving ground gated 6T SRAM cells to facilitate single-ended write operations - researchr publication authors

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Hailong Jiao, Volkan Kursun. Full-custom design of low leakage data preserving ground gated 6T SRAM cells to facilitate single-ended write operations. In 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea (South), May 20-23, 2012. pages 484-487, IEEE, 2012. [doi]

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