Hailong Jiao, Volkan Kursun. Full-custom design of low leakage data preserving ground gated 6T SRAM cells to facilitate single-ended write operations. In 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea (South), May 20-23, 2012. pages 484-487, IEEE, 2012. [doi]
@inproceedings{JiaoK12-0,
title = {Full-custom design of low leakage data preserving ground gated 6T SRAM cells to facilitate single-ended write operations},
author = {Hailong Jiao and Volkan Kursun},
year = {2012},
doi = {10.1109/ISCAS.2012.6272070},
url = {http://dx.doi.org/10.1109/ISCAS.2012.6272070},
researchr = {https://researchr.org/publication/JiaoK12-0},
cites = {0},
citedby = {0},
pages = {484-487},
booktitle = {2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea (South), May 20-23, 2012},
publisher = {IEEE},
isbn = {978-1-4673-0218-0},
}