A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS - researchr publication authors

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Wei Jin, Weifeng He, Jian-Fei Jiang, Haichao Huang, Xuejun Zhao, Yanan Sun, Xin Chen, Naifeng Jing. A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS. Integration, 58:27-34, 2017. [doi]

This author has not been identified. Look up 'Wei Jin' in GoogleThis author has not been identified. Look up 'Weifeng He' in GoogleThis author has not been identified. Look up 'Jian-Fei Jiang' in GoogleThis author has not been identified. Look up 'Haichao Huang' in GoogleThis author has not been identified. Look up 'Xuejun Zhao' in GoogleThis author has not been identified. Look up 'Yanan Sun' in GoogleThis author has not been identified. Look up 'Xin Chen' in GoogleThis author has not been identified. Look up 'Naifeng Jing' in Google

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