Characterization of border traps in III-V MOSFETs using an RF transconductance method - researchr publication authors

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Sofia Johansson, Jiongjiong Mo, Erik Lind. Characterization of border traps in III-V MOSFETs using an RF transconductance method. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 53-56, IEEE, 2013. [doi]

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