Sofia Johansson, Jiongjiong Mo, Erik Lind. Characterization of border traps in III-V MOSFETs using an RF transconductance method. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 53-56, IEEE, 2013. [doi]
@inproceedings{JohanssonML13,
title = {Characterization of border traps in III-V MOSFETs using an RF transconductance method},
author = {Sofia Johansson and Jiongjiong Mo and Erik Lind},
year = {2013},
doi = {10.1109/ESSDERC.2013.6818817},
url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818817},
researchr = {https://researchr.org/publication/JohanssonML13},
cites = {0},
citedby = {0},
pages = {53-56},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
publisher = {IEEE},
}