Sofia Johansson, Jiongjiong Mo, Erik Lind. Characterization of border traps in III-V MOSFETs using an RF transconductance method. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 53-56, IEEE, 2013. [doi]
Abstract is missing.