Quantification of Dopant Profiles in SiGe HBT Devices - researchr publication authors

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Eric J. Jones, Jonathan Poplawsky, Donavan Leonard, Keith Chung, Kevin Mercurio, Paul Brabant, Thomas Adam, Patrick B. Shea, Thomas Knight. Quantification of Dopant Profiles in SiGe HBT Devices. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018. pages 255-258, IEEE, 2018. [doi]

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