Eric J. Jones, Jonathan Poplawsky, Donavan Leonard, Keith Chung, Kevin Mercurio, Paul Brabant, Thomas Adam, Patrick B. Shea, Thomas Knight. Quantification of Dopant Profiles in SiGe HBT Devices. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018. pages 255-258, IEEE, 2018. [doi]
@inproceedings{JonesPLCMBASK18,
title = {Quantification of Dopant Profiles in SiGe HBT Devices},
author = {Eric J. Jones and Jonathan Poplawsky and Donavan Leonard and Keith Chung and Kevin Mercurio and Paul Brabant and Thomas Adam and Patrick B. Shea and Thomas Knight},
year = {2018},
doi = {10.1109/BCICTS.2018.8551114},
url = {https://doi.org/10.1109/BCICTS.2018.8551114},
researchr = {https://researchr.org/publication/JonesPLCMBASK18},
cites = {0},
citedby = {0},
pages = {255-258},
booktitle = {2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018},
publisher = {IEEE},
isbn = {978-1-5386-6502-2},
}