Response of Switching Hole Traps in the Small-Area P-MOSFET Under Channel Hot-Hole Effect

X. Ju, D. S. Ang. Response of Switching Hole Traps in the Small-Area P-MOSFET Under Channel Hot-Hole Effect. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

Abstract is missing.