Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET

Hak-Kee Jung, Sima Dimitrijev. Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET. J. Inform. and Commun. Convergence Engineering, 16(1), 2018. [doi]

@article{JungD18,
  title = {Analysis of Flat-Band-Voltage Dependent Breakdown Voltage for 10 nm Double Gate MOSFET},
  author = {Hak-Kee Jung and Sima Dimitrijev},
  year = {2018},
  doi = {10.6109/jicce.2018.16.1.43},
  url = {https://doi.org/10.6109/jicce.2018.16.1.43},
  researchr = {https://researchr.org/publication/JungD18},
  cites = {0},
  citedby = {0},
  journal = {J. Inform. and Commun. Convergence Engineering},
  volume = {16},
  number = {1},
}