High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique - researchr publication authors

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Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu. High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proceedings of the IEEE, 101(7):1603-1608, 2013. [doi]

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