High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique

Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu. High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proceedings of the IEEE, 101(7):1603-1608, 2013. [doi]

@article{JungPYFSOS13,
  title = {High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique},
  author = {Myung-Ho Jung and Goon-Ho Park and Tomohiro Yoshida and Hirokazu Fukidome and Tetsuya Suemitsu and Taiichi Otsuji and Maki Suemitsu},
  year = {2013},
  doi = {10.1109/JPROC.2013.2258651},
  url = {http://dx.doi.org/10.1109/JPROC.2013.2258651},
  researchr = {https://researchr.org/publication/JungPYFSOS13},
  cites = {0},
  citedby = {0},
  journal = {Proceedings of the IEEE},
  volume = {101},
  number = {7},
  pages = {1603-1608},
}