A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications

Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta. A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectronics Journal, 37(7):620-626, 2006. [doi]

@article{KabraKGHGG06,
  title = {A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications},
  author = {Sneha Kabra and Harsupreet Kaur and Ritesh Gupta and Subhasis Haldar and Mridula Gupta and R. S. Gupta},
  year = {2006},
  doi = {10.1016/j.mejo.2005.09.018},
  url = {http://dx.doi.org/10.1016/j.mejo.2005.09.018},
  tags = {empirical, systematic-approach},
  researchr = {https://researchr.org/publication/KabraKGHGG06},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {37},
  number = {7},
  pages = {620-626},
}