A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications

Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta. A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectronics Journal, 37(7):620-626, 2006. [doi]

Abstract

Abstract is missing.