Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken. Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectronics Reliability, 47(4-5):559-566, 2007. [doi]

Authors

Ben Kaczer

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Robin Degraeve

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Philippe Roussel

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Guido Groeseneken

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