Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken. Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectronics Reliability, 47(4-5):559-566, 2007. [doi]
@article{KaczerDRG07,
title = {Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability},
author = {Ben Kaczer and Robin Degraeve and Philippe Roussel and Guido Groeseneken},
year = {2007},
doi = {10.1016/j.microrel.2007.01.063},
url = {http://dx.doi.org/10.1016/j.microrel.2007.01.063},
tags = {reliability},
researchr = {https://researchr.org/publication/KaczerDRG07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {4-5},
pages = {559-566},
}