8Gb 3D DDR3 DRAM using through-silicon-via technology

Uksong Kang, Hoeju Chung, Seongmoo Heo, Soon-Hong Ahn, Hoon Lee, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jin-Ho Kim, Jaewook Lee, Han Sung Joo, Woo-Seop Kim, Hyun-Kyung Kim, Eun-Mi Lee, So-Ra Kim, Keum-Hee Ma, Dong Hyun Jang, Nam-Seog Kim, Man-Sik Choi, Sae-Jang Oh, Jung-Bae Lee, Tae-Kyung Jung, Jei-Hwan Yoo, Changhyun Kim. 8Gb 3D DDR3 DRAM using through-silicon-via technology. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 130-131, IEEE, 2009. [doi]

Abstract

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