Physical understanding and optimization of resistive switching characteristics in oxide-RRAM - researchr publication authors

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J. F. Kang, P. Huang, Z. Chen, Y. D. Zhao, C. Liu, R. Z. Han, L. F. Liu, X. Y. Liu, Y. Y. Wang, B. Gao. Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 154-159, IEEE, 2016. [doi]

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