Siegfried F. Karg, G. Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi. Transition-metal-oxide-based resistance-change memories. IBM Journal of Research and Development, 52(4-5):481-492, 2008. [doi]
@article{KargMBRSJLJSLAWSDC08,
title = {Transition-metal-oxide-based resistance-change memories},
author = {Siegfried F. Karg and G. Ingmar Meijer and J. Georg Bednorz and Charles T. Rettner and Alejandro G. Schrott and Eric A. Joseph and Chung Hon Lam and Markus Janousch and Urs Staub and Fabio LaMattina and Santos F. Alvarado and Daniel Widmer and Richard Stutz and Ute Drechsler and Daniele Caimi},
year = {2008},
doi = {10.1147/rd.524.0481},
url = {http://dx.doi.org/10.1147/rd.524.0481},
tags = {rule-based},
researchr = {https://researchr.org/publication/KargMBRSJLJSLAWSDC08},
cites = {0},
citedby = {0},
journal = {IBM Journal of Research and Development},
volume = {52},
number = {4-5},
pages = {481-492},
}