Siegfried F. Karg, G. Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi. Transition-metal-oxide-based resistance-change memories. IBM Journal of Research and Development, 52(4-5):481-492, 2008. [doi]
Abstract is missing.