Xugang Ke, Dongsheng Brian Ma. A 3-to-40V VIN 10-to-50MHz 12W isolated GaN driver with self-excited tdead minimizer achieving 0.2ns/0.3ns tdead, 7.9% minimum duty ratio and 50V/ns CMTI. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 386-388, IEEE, 2018. [doi]
@inproceedings{KeM18,
title = {A 3-to-40V VIN 10-to-50MHz 12W isolated GaN driver with self-excited tdead minimizer achieving 0.2ns/0.3ns tdead, 7.9% minimum duty ratio and 50V/ns CMTI},
author = {Xugang Ke and Dongsheng Brian Ma},
year = {2018},
doi = {10.1109/ISSCC.2018.8310346},
url = {https://doi.org/10.1109/ISSCC.2018.8310346},
researchr = {https://researchr.org/publication/KeM18},
cites = {0},
citedby = {0},
pages = {386-388},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}