A 3-to-40V VIN 10-to-50MHz 12W isolated GaN driver with self-excited tdead minimizer achieving 0.2ns/0.3ns tdead, 7.9% minimum duty ratio and 50V/ns CMTI

Xugang Ke, Dongsheng Brian Ma. A 3-to-40V VIN 10-to-50MHz 12W isolated GaN driver with self-excited tdead minimizer achieving 0.2ns/0.3ns tdead, 7.9% minimum duty ratio and 50V/ns CMTI. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 386-388, IEEE, 2018. [doi]

Abstract

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