Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs - researchr publication authors

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D. Q. Kelly, S. Dey, D. Onsongo, S. K. Banerjee. Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. Microelectronics Reliability, 45(7-8):1033-1040, 2005. [doi]

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