Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs

D. Q. Kelly, S. Dey, D. Onsongo, S. K. Banerjee. Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. Microelectronics Reliability, 45(7-8):1033-1040, 2005. [doi]

@article{KellyDOB05,
  title = {Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs},
  author = {D. Q. Kelly and S. Dey and D. Onsongo and S. K. Banerjee},
  year = {2005},
  doi = {10.1016/j.microrel.2005.01.011},
  url = {http://dx.doi.org/10.1016/j.microrel.2005.01.011},
  tags = {reliability},
  researchr = {https://researchr.org/publication/KellyDOB05},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {45},
  number = {7-8},
  pages = {1033-1040},
}