Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip

T. Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, F. La Rosa, Stephan Niel, Arnaud Régnier, Jean Michel Portal, Pascal Masson. Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 6, IEEE, 2018. [doi]

@inproceedings{KempfMBMRNRPM18,
  title = {Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip},
  author = {T. Kempf and Vincenzo Della Marca and L. Baron and F. Maugain and F. La Rosa and Stephan Niel and Arnaud Régnier and Jean Michel Portal and Pascal Masson},
  year = {2018},
  doi = {10.1109/IRPS.2018.8353642},
  url = {https://doi.org/10.1109/IRPS.2018.8353642},
  researchr = {https://researchr.org/publication/KempfMBMRNRPM18},
  cites = {0},
  citedby = {0},
  pages = {6},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-5479-8},
}