Polysilicon resistor stability under voltage stress for safe-operating area characterization - researchr publication authors

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C. Kendrick, M. Cook, J. P. Gambino, T. Myers, J. Slezak, T. Hirano, T. Sano, Y. Watanabe, K. Ozeki. Polysilicon resistor stability under voltage stress for safe-operating area characterization. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 4-1, IEEE, 2018. [doi]

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