Polysilicon resistor stability under voltage stress for safe-operating area characterization

C. Kendrick, M. Cook, J. P. Gambino, T. Myers, J. Slezak, T. Hirano, T. Sano, Y. Watanabe, K. Ozeki. Polysilicon resistor stability under voltage stress for safe-operating area characterization. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 4-1, IEEE, 2018. [doi]

@inproceedings{KendrickCGMSHSW18,
  title = {Polysilicon resistor stability under voltage stress for safe-operating area characterization},
  author = {C. Kendrick and M. Cook and J. P. Gambino and T. Myers and J. Slezak and T. Hirano and T. Sano and Y. Watanabe and K. Ozeki},
  year = {2018},
  doi = {10.1109/IRPS.2018.8353686},
  url = {https://doi.org/10.1109/IRPS.2018.8353686},
  researchr = {https://researchr.org/publication/KendrickCGMSHSW18},
  cites = {0},
  citedby = {0},
  pages = {4},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-5479-8},
}