Joseph T. Kennedy, Randy Mooney, Robert Ellis, James E. Jaussi, Shekhar Borkar, Jung Hwan Choi, Jae-Kwan Kim 0003, Chan-Kyong Kim, Woo-Seop Kim, Chang-Hyun Kim, Soo-In Cho, Steffen Loeffler, Jochen Hoffmann, Wolfgang Hokenmaier, Russ Houghton, Thomas Vogelsang. A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems. J. Solid-State Circuits, 40(1):233-244, 2005. [doi]
@article{KennedyMEJBCKKK05, title = {A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems}, author = {Joseph T. Kennedy and Randy Mooney and Robert Ellis and James E. Jaussi and Shekhar Borkar and Jung Hwan Choi and Jae-Kwan Kim 0003 and Chan-Kyong Kim and Woo-Seop Kim and Chang-Hyun Kim and Soo-In Cho and Steffen Loeffler and Jochen Hoffmann and Wolfgang Hokenmaier and Russ Houghton and Thomas Vogelsang}, year = {2005}, doi = {10.1109/JSSC.2004.837964}, url = {https://doi.org/10.1109/JSSC.2004.837964}, researchr = {https://researchr.org/publication/KennedyMEJBCKKK05}, cites = {0}, citedby = {0}, journal = {J. Solid-State Circuits}, volume = {40}, number = {1}, pages = {233-244}, }