Joseph T. Kennedy, Randy Mooney, Robert Ellis, James E. Jaussi, Shekhar Borkar, Jung Hwan Choi, Jae-Kwan Kim 0003, Chan-Kyong Kim, Woo-Seop Kim, Chang-Hyun Kim, Soo-In Cho, Steffen Loeffler, Jochen Hoffmann, Wolfgang Hokenmaier, Russ Houghton, Thomas Vogelsang. A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems. J. Solid-State Circuits, 40(1):233-244, 2005. [doi]
Abstract is missing.