An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation

Saqib A. Khan, Chul Seung Lim, GeunYong Bak, Sanghyeon Baeg, Soonyoung Lee. An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation. Microelectronics Reliability, 69:100-108, 2017. [doi]

@article{KhanLBBL17,
  title = {An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation},
  author = {Saqib A. Khan and Chul Seung Lim and GeunYong Bak and Sanghyeon Baeg and Soonyoung Lee},
  year = {2017},
  doi = {10.1016/j.microrel.2016.12.004},
  url = {http://dx.doi.org/10.1016/j.microrel.2016.12.004},
  researchr = {https://researchr.org/publication/KhanLBBL17},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {69},
  pages = {100-108},
}