GeunYong Bak - researchr alias

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Viewing Publication 1 - 6 from 6

2021

DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA PackageMuhammad Waqar, GeunYong Bak, Junhyeong Kwon, Sanghyeon Baeg. access, 9:63002-63011, 2021. [doi]

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray RadiationDonghyuk Yun, Myungsang Park, GeunYong Bak, Sanghyeon Baeg, Shi-Jie Wen. access, 9:137514-137523, 2021. [doi]

2018

Failure signature analysis of power-opens in DDR3 SDRAMsTan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg. mr, 88:277-281, 2018. [doi]

Study of proton radiation effect to row hammer fault in DDR4 SDRAMsChul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong. mr, 80:85-90, 2018. [doi]

2017

An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiationSaqib A. Khan, Chul Seung Lim, GeunYong Bak, Sanghyeon Baeg, Soonyoung Lee. mr, 69:100-108, 2017. [doi]

2015

Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beamsGeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman. irps 2015: 3 [doi]

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