Donghyuk Yun - researchr alias

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Viewing Publication 1 - 5 from 5

2021

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray RadiationDonghyuk Yun, Myungsang Park, GeunYong Bak, Sanghyeon Baeg, Shi-Jie Wen. access, 9:137514-137523, 2021. [doi]

2018

Study of proton radiation effect to row hammer fault in DDR4 SDRAMsChul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong. mr, 80:85-90, 2018. [doi]

Study of TID effects on one row hammering using gamma in DDR4 SDRAMsDonghyuk Yun, Myungsang Park, Chul Seung Lim, Sanghyeon Baeg. irps 2018: 2-1 [doi]

2016

Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technologyKyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg. mr, 57:39-46, 2016. [doi]

Statistical distributions of row-hammering induced failures in DDR3 componentsKyungbae Park, Donghyuk Yun, Sanghyeon Baeg. mr, 67:143-149, 2016. [doi]

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