2) and Low Resistance Drift (~0.002 at 105°C)

Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M. Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H.-S. Philip Wong, Kenneth E. Goodson, Eric Pop. 2) and Low Resistance Drift (~0.002 at 105°C). In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 310-311, IEEE, 2022. [doi]

@inproceedings{KhanPWWKKRNASLO22,
  title = {2) and Low Resistance Drift (~0.002 at 105°C)},
  author = {Asir Intisar Khan and Christopher Perez and Xiangjin Wu and Byoungjun Won and Kangsik Kim and Heungdong Kwon and Pranav Ramesh and Kathryn M. Neilson and Mehdi Asheghi and Krishna Saraswat and Zonghoon Lee and Il-Kwon Oh and H.-S. Philip Wong and Kenneth E. Goodson and Eric Pop},
  year = {2022},
  doi = {10.1109/VLSITechnologyandCir46769.2022.9830348},
  url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830348},
  researchr = {https://researchr.org/publication/KhanPWWKKRNASLO22},
  cites = {0},
  citedby = {0},
  pages = {310-311},
  booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-9772-5},
}