2) and Low Resistance Drift (~0.002 at 105°C)

Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M. Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H.-S. Philip Wong, Kenneth E. Goodson, Eric Pop. 2) and Low Resistance Drift (~0.002 at 105°C). In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 310-311, IEEE, 2022. [doi]

Abstract

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