Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez. Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{KhandelwalKHMDD19,
title = {Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling},
author = {Sourabh Khandelwal and Kevin Kellogg and Cole Hill and Hugo Morales and Larry Dunleavy and Gergana Drandova and Anita Pacheco and Jose Jimenez},
year = {2019},
doi = {10.1109/BCICTS45179.2019.8972721},
url = {https://doi.org/10.1109/BCICTS45179.2019.8972721},
researchr = {https://researchr.org/publication/KhandelwalKHMDD19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0586-4},
}