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34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices

Win-San Khwa, Ping-Chun Wu, Jui-Jen Wu, Jian-Wei Su, Ho-Yu Chen, Zhao-En Ke, Ting-Chien Chiu, Jun-Ming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang. 34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 568-570, IEEE, 2024. [doi]

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