Tony Tae-Hyoung Kim, Ngoc Le Ba. Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C. J. Solid-State Circuits, 49(11):2534-2546, 2014. [doi]
@article{KimB14-4,
title = {Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C},
author = {Tony Tae-Hyoung Kim and Ngoc Le Ba},
year = {2014},
doi = {10.1109/JSSC.2014.2338860},
url = {http://dx.doi.org/10.1109/JSSC.2014.2338860},
researchr = {https://researchr.org/publication/KimB14-4},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {49},
number = {11},
pages = {2534-2546},
}