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Tony Tae-Hyoung Kim, Ngoc Le Ba. Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C. J. Solid-State Circuits, 49(11):2534-2546, 2014. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Design of Temperature-Aware Low-Voltage 8T SRAM in SOI Technology for High-Temperature Operation (25 %C-300 %C)Ngoc Le Ba, Tony Tae-Hyoung Kim. tvlsi, 25(8):2383-2387, 2017. [doi]
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